mem: Add HMC Timing Parameters

mem: Add HMC Timing Parameters
A single HMC-2500 x32 model based on:

[1] DRAMSpec: a high-level DRAM bank modelling tool developed at the University
of Kaiserslautern. This high level tool uses RC (resistance-capacitance) and CV
(capacitance-voltage) models to estimate the DRAM bank latency and power
numbers.

[2] A Logic-base Interconnect for Supporting Near Memory Computation in the
Hybrid Memory Cube (E. Azarkhish et. al) Assumed for the HMC model is a 30 nm
technology node.  The modelled HMC consists of a 4 Gbit part with 4 layers
connected with TSVs.  Each layer has 16 vaults and each vault consists of 2
banks per layer.  In order to be able to use the same controller used for 2D
DRAM generations for HMC, the following analogy is done: Channel (DDR) => Vault
(HMC) device_size (DDR) => size of a single layer in a vault ranks per channel
(DDR) => number of layers banks per rank (DDR) => banks per layer devices per
rank (DDR) => devices per layer ( 1 for HMC).  The parameters for which no
input is available are inherited from the DDR3 configuration.