# timing behaviour and constraints - all in nanoseconds
+ # the base clock period of the DRAM
+ tCK = Param.Latency("Clock period")
+
# the amount of time in nanoseconds from issuing an activate command
# to the data being available in the row buffer for a read/write
tRCD = Param.Latency("RAS to CAS delay")
# DDR3 has 8 banks in all configurations
banks_per_rank = 8
+ # 800 MHz
+ tCK = '1.25ns'
+
# DDR3-1600 11-11-11-28
tRCD = '13.75ns'
tCL = '13.75ns'
# DDR3 has 8 banks in all configurations
banks_per_rank = 8
+ # 666 MHs
+ tCK = '1.5ns'
+
tRCD = '15ns'
tCL = '15ns'
tRP = '15ns'
# LPDDR2-S4 has 8 banks in all configurations
banks_per_rank = 8
+ # 533 MHz
+ tCK = '1.876ns'
+
# Fixed at 15 ns
tRCD = '15ns'
# WideIO has 4 banks in all configurations
banks_per_rank = 4
+ # 200 MHz
+ tCK = '5ns'
+
# WIO-200
tRCD = '18ns'
tCL = '18ns'
# LPDDR3 has 8 banks in all configurations
banks_per_rank = 8
+ # 800 MHz
+ tCK = '1.25ns'
+
# Fixed at 15 ns
tRCD = '15ns'
writeLowThreshold(writeBufferSize * p->write_low_thresh_perc / 100.0),
minWritesPerSwitch(p->min_writes_per_switch),
writesThisTime(0), readsThisTime(0),
- tWTR(p->tWTR), tRTW(p->tRTW), tBURST(p->tBURST),
+ tCK(p->tCK), tWTR(p->tWTR), tRTW(p->tRTW), tBURST(p->tBURST),
tRCD(p->tRCD), tCL(p->tCL), tRP(p->tRP), tRAS(p->tRAS), tWR(p->tWR),
tRTP(p->tRTP), tRFC(p->tRFC), tREFI(p->tREFI), tRRD(p->tRRD),
tXAW(p->tXAW), activationLimit(p->activation_limit),