# tRC - assumed to be tRAS + tRP
-# A single DDR3 x64 interface (one command and address bus), with
-# default timings based on DDR3-1600 4 Gbit parts in an 8x8
-# configuration, which would amount to 4 Gbyte of memory.
+# A single DDR3-1600 x64 channel (one command and address bus), with
+# timings based on a DDR3-1600 4 Gbit datasheet (Micron MT41J512M8) in
+# an 8x8 configuration, amounting to 4 Gbyte of memory.
class DDR3_1600_x64(DRAMCtrl):
# 8x8 configuration, 8 devices each with an 8-bit interface
device_bus_width = 8
# DDR3 is a BL8 device
burst_length = 8
- # Each device has a page (row buffer) size of 1KB
- # (this depends on the memory density)
+ # Each device has a page (row buffer) size of 1 Kbyte (1K columns x8)
device_rowbuffer_size = '1kB'
# 8x8 configuration, so 8 devices
# 800 MHz
tCK = '1.25ns'
- # DDR3-1600 11-11-11-28
+ # 8 beats across an x64 interface translates to 4 clocks @ 800 MHz
+ tBURST = '5ns'
+
+ # DDR3-1600 11-11-11
tRCD = '13.75ns'
tCL = '13.75ns'
tRP = '13.75ns'
tRAS = '35ns'
+ tRRD = '6ns'
+ tXAW = '30ns'
+ activation_limit = 4
+ tRFC = '260ns'
+
tWR = '15ns'
- tRTP = '7.5ns'
- # 8 beats across an x64 interface translates to 4 clocks @ 800 MHz.
- # Note this is a BL8 DDR device.
- tBURST = '5ns'
+ # Greater of 4 CK or 7.5 ns
+ tWTR = '7.5ns'
- # DDR3, 4 Gbit has a tRFC of 240 CK and tCK = 1.25 ns
- tRFC = '300ns'
+ # Greater of 4 CK or 7.5 ns
+ tRTP = '7.5ns'
- # DDR3, <=85C, half for >85C
+ # Default read-to-write bus around to 2 CK, @800 MHz = 2.5 ns
+ tRTW = '2.5ns'
+
+ # <=85C, half for >85C
tREFI = '7.8us'
- # Greater of 4 CK or 7.5 ns, 4 CK @ 800 MHz = 5 ns
- tWTR = '7.5ns'
+# A single DDR3-2133 x64 channel refining a selected subset of the
+# options for the DDR-1600 configuration, based on the same DDR3-1600
+# 4 Gbit datasheet (Micron MT41J512M8). Most parameters are kept
+# consistent across the two configurations.
+class DDR3_2133_x64(DDR3_1600_x64):
+ # 1066 MHz
+ tCK = '0.938ns'
+
+ # 8 beats across an x64 interface translates to 4 clocks @ 1066 MHz
+ tBURST = '3.752ns'
+
+ # DDR3-2133 14-14-14
+ tRCD = '13.09ns'
+ tCL = '13.09ns'
+ tRP = '13.09ns'
+ tRAS = '33ns'
+ tRRD = '5ns'
+ tXAW = '25ns'
+
+# A single DDR4-2400 x64 channel (one command and address bus), with
+# timings based on a DDR4-2400 4 Gbit datasheet (Samsung K4A4G085WD)
+# in an 8x8 configuration, amounting to 4 Gbyte of memory.
+class DDR4_2400_x64(DRAMCtrl):
+ # 8x8 configuration, 8 devices each with an 8-bit interface
+ device_bus_width = 8
- # Default read-to-write bus around to 2 CK, @800 MHz = 2.5 ns
- tRTW = '2.5ns'
+ # DDR4 is a BL8 device
+ burst_length = 8
+
+ # Each device has a page (row buffer) size of 1 Kbyte (1K columns x8)
+ device_rowbuffer_size = '1kB'
+
+ # 8x8 configuration, so 8 devices
+ devices_per_rank = 8
+
+ # Use a single rank
+ ranks_per_channel = 1
- # Assume 5 CK for activate to activate for different banks
- tRRD = '6.25ns'
+ # DDR4 has 16 banks (4 bank groups) in all
+ # configurations. Currently we do not capture the additional
+ # constraints incurred by the bank groups
+ banks_per_rank = 16
- # With a 2kbyte page size, DDR3-1600 lands around 40 ns
- tXAW = '40ns'
+ # 1200 MHz
+ tCK = '0.833ns'
+
+ # 8 beats across an x64 interface translates to 4 clocks @ 1200 MHz
+ tBURST = '3.333ns'
+
+ # DDR4-2400 17-17-17
+ tRCD = '14.16ns'
+ tCL = '14.16ns'
+ tRP = '14.16ns'
+ tRAS = '32ns'
+
+ # Here using the average of RRD_S and RRD_L
+ tRRD = '4.1ns'
+ tXAW = '21ns'
activation_limit = 4
+ tRFC = '260ns'
+
+ tWR = '15ns'
+ # Here using the average of WTR_S and WTR_L
+ tWTR = '5ns'
+
+ # Greater of 4 CK or 7.5 ns
+ tRTP = '7.5ns'
+
+ # Default read-to-write bus around to 2 CK, @1200 MHz = 1.666 ns
+ tRTW = '1.666ns'
+
+ # <=85C, half for >85C
+ tREFI = '7.8us'
# A single DDR3 x64 interface (one command and address bus), with
# default timings based on DDR3-1333 4 Gbit parts in an 8x8